Large-scale MOVPE growth of GaAs and AlGaAs layers

• Published in: Journal of crystal growth 1986-09, Vol.77 (1), p.286-292
• Main Authors: Gersten, S.W., Vendura, G.J., Yeh, Y.C.M.
• Format: Article
• Language: English
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(86)90313-1

The growth of very large area GaAs and Al x Ga 1− x As epitaxial layers by metal organic vapor phase deposition is reported. Deposition over areas up to 1080 cm 2 on a vertical, three-tiered barrel shaped susceptor was evaluated. Depth profiles of carrier concentration, determined by capacitance-voltage measurements, provided details of growth. Resulting undoped, n-type, and p-type GaAs layers were studied as a function of dopant mole fraction, substrate temperature and distance along the direction of flow of source materials. Deposition of Al x Ga 1− x As, on the other hand, was fixed at 750°C and characterized for thickness and stoichiometry by means of X-ray rocking curves. The distribution, conditions, causes, and means of control for growing multiple epitaxial layers using the system under investigation are discussed. Results of this study demonstrate that the following are realizable: (1) GaAs growth with thickness variations as little as ± 10.0% over most of the active area. (2) Doping uniformity within ± 10% along the direction of gas flow. (3) Aluminum content of Al x Ga 1− x As within ±3.0% over the entire surface. (4) Simultaneous, uniform deposition over ninety 2.5 by 4.5 cm 2 wafers.