Electrolytic deposition of bismuth on CdS(0001) single-crystal surfaces

The electrolytic deposition of Bi on CdS(0001) single-crystal surfaces has been studied in aqueous 0.5 M NaClO 4 + x M Bi(ClO 4) 3 solutions (pH 2) using electrochemical dc and pulse polarization techniques under potentiostatic control. The initial steps of Bi deposition are interpreted in terms of...

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Bibliographic Details
Published in:Electrochimica acta 1986-02, Vol.31 (2), p.211-216
Main Authors: Elmorsi, M.A., Jüttner, K.
Format: Article
Language:English
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Summary:The electrolytic deposition of Bi on CdS(0001) single-crystal surfaces has been studied in aqueous 0.5 M NaClO 4 + x M Bi(ClO 4) 3 solutions (pH 2) using electrochemical dc and pulse polarization techniques under potentiostatic control. The initial steps of Bi deposition are interpreted in terms of a nucleation and growth model based on progressive nucleation with diffusion-controlled transfer of Bi 3+ at three-dimensional growth centres. The number-density and mean size of the Bi crystallites are determined as a function of the amount of Bi deposited. The formation of a localized Schottky barrier at the interface between the Bi crystallites and the CdS surface was found to prevent the anodic dissolution of the Bi deposit even at high anodic polarization in the dark as well as under illumination of the electrode surface. The deposition of Bi inhibits the photoanodic dissolution owing to geometrical blocking of the CdS surface by Bi crystallites.
ISSN:0013-4686
1873-3859
DOI:10.1016/0013-4686(86)87110-9