Lateral coherence properties of broad-area semiconductor quantum well lasers

The lateral coherence of broad-area lasers fabricated from a GaAs/GaAlAs graded index waveguide separate confinement and single quantum well heterostructure grown by molecular-beam epitaxy was investigated. These lasers exhibit a high degree of coherence along the junction plane, thus producing a st...

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Bibliographic Details
Published in:Journal of applied physics 1986-07, Vol.60 (1), p.66-68
Main Authors: Larsson, A., Salzman, J., Mittelstein, M., Yariv, A.
Format: Article
Language:English
Subjects:
Lasers And Masers
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Summary:The lateral coherence of broad-area lasers fabricated from a GaAs/GaAlAs graded index waveguide separate confinement and single quantum well heterostructure grown by molecular-beam epitaxy was investigated. These lasers exhibit a high degree of coherence along the junction plane, thus producing a stable and very narrow far field intensity distribution.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.337629