Time-resolved temperature measurement of picosecond laser irradiated silicon

Time-resolved reflectivity and transmission measurements of crystalline silicon films reveal lattice heating through the temperature dependence of the complex index of refraction. The temperature rise, which is much higher than derived by others from Raman scattering experiments, occurs in a surface...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1983-01, Vol.43 (2), p.168-170
Main Authors: Lompré, L. A., Liu, J. M., Kurz, H., Bloembergen, N.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Time-resolved reflectivity and transmission measurements of crystalline silicon films reveal lattice heating through the temperature dependence of the complex index of refraction. The temperature rise, which is much higher than derived by others from Raman scattering experiments, occurs in a surface layer of 100-nm thickness.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.94268