Time-resolved temperature measurement of picosecond laser irradiated silicon

Time-resolved reflectivity and transmission measurements of crystalline silicon films reveal lattice heating through the temperature dependence of the complex index of refraction. The temperature rise, which is much higher than derived by others from Raman scattering experiments, occurs in a surface...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1983-01, Vol.43 (2), p.168-170
Main Authors: Lompré, L. A., Liu, J. M., Kurz, H., Bloembergen, N.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c322t-cdd420f322fea164bc012ed1aaa4b5bc30f7f43bb627be3e0015b88653b29bb63
cites cdi_FETCH-LOGICAL-c322t-cdd420f322fea164bc012ed1aaa4b5bc30f7f43bb627be3e0015b88653b29bb63
container_end_page 170
container_issue 2
container_start_page 168
container_title Applied physics letters
container_volume 43
creator Lompré, L. A.
Liu, J. M.
Kurz, H.
Bloembergen, N.
description Time-resolved reflectivity and transmission measurements of crystalline silicon films reveal lattice heating through the temperature dependence of the complex index of refraction. The temperature rise, which is much higher than derived by others from Raman scattering experiments, occurs in a surface layer of 100-nm thickness.
doi_str_mv 10.1063/1.94268
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_24103247</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>24103247</sourcerecordid><originalsourceid>FETCH-LOGICAL-c322t-cdd420f322fea164bc012ed1aaa4b5bc30f7f43bb627be3e0015b88653b29bb63</originalsourceid><addsrcrecordid>eNotkM1OwzAQhC0EEqUgXiEnOKXs2s5Pj6iCghSJSzlbtrOWjJI42CkSb4-hnL7dmdk9DGO3CBuEWjzgZit53Z6xFULTlAKxPWcrABBlva3wkl2l9JHXiguxYt3Bj1RGSmH4or5YaJwp6uUYqRhJp8yRpqUIrpi9DYlsmPpi0Ili4WPUvddLPkt-yO50zS6cHhLd_HPN3p-fDruXsnvbv-4eu9IKzpfS9r3k4PLsSGMtjQXk1KPWWprKWAGucVIYU_PGkCAArEzb1pUwfJtVsWZ3p79zDJ9HSosafbI0DHqicEyKSwTBZZOD96egjSGlSE7N0Y86fisE9duWQvXXlvgBNyBdXQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>24103247</pqid></control><display><type>article</type><title>Time-resolved temperature measurement of picosecond laser irradiated silicon</title><source>AIP Digital Archive</source><creator>Lompré, L. A. ; Liu, J. M. ; Kurz, H. ; Bloembergen, N.</creator><creatorcontrib>Lompré, L. A. ; Liu, J. M. ; Kurz, H. ; Bloembergen, N.</creatorcontrib><description>Time-resolved reflectivity and transmission measurements of crystalline silicon films reveal lattice heating through the temperature dependence of the complex index of refraction. The temperature rise, which is much higher than derived by others from Raman scattering experiments, occurs in a surface layer of 100-nm thickness.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.94268</identifier><language>eng</language><ispartof>Applied physics letters, 1983-01, Vol.43 (2), p.168-170</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c322t-cdd420f322fea164bc012ed1aaa4b5bc30f7f43bb627be3e0015b88653b29bb63</citedby><cites>FETCH-LOGICAL-c322t-cdd420f322fea164bc012ed1aaa4b5bc30f7f43bb627be3e0015b88653b29bb63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Lompré, L. A.</creatorcontrib><creatorcontrib>Liu, J. M.</creatorcontrib><creatorcontrib>Kurz, H.</creatorcontrib><creatorcontrib>Bloembergen, N.</creatorcontrib><title>Time-resolved temperature measurement of picosecond laser irradiated silicon</title><title>Applied physics letters</title><description>Time-resolved reflectivity and transmission measurements of crystalline silicon films reveal lattice heating through the temperature dependence of the complex index of refraction. The temperature rise, which is much higher than derived by others from Raman scattering experiments, occurs in a surface layer of 100-nm thickness.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1983</creationdate><recordtype>article</recordtype><recordid>eNotkM1OwzAQhC0EEqUgXiEnOKXs2s5Pj6iCghSJSzlbtrOWjJI42CkSb4-hnL7dmdk9DGO3CBuEWjzgZit53Z6xFULTlAKxPWcrABBlva3wkl2l9JHXiguxYt3Bj1RGSmH4or5YaJwp6uUYqRhJp8yRpqUIrpi9DYlsmPpi0Ili4WPUvddLPkt-yO50zS6cHhLd_HPN3p-fDruXsnvbv-4eu9IKzpfS9r3k4PLsSGMtjQXk1KPWWprKWAGucVIYU_PGkCAArEzb1pUwfJtVsWZ3p79zDJ9HSosafbI0DHqicEyKSwTBZZOD96egjSGlSE7N0Y86fisE9duWQvXXlvgBNyBdXQ</recordid><startdate>19830101</startdate><enddate>19830101</enddate><creator>Lompré, L. A.</creator><creator>Liu, J. M.</creator><creator>Kurz, H.</creator><creator>Bloembergen, N.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19830101</creationdate><title>Time-resolved temperature measurement of picosecond laser irradiated silicon</title><author>Lompré, L. A. ; Liu, J. M. ; Kurz, H. ; Bloembergen, N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c322t-cdd420f322fea164bc012ed1aaa4b5bc30f7f43bb627be3e0015b88653b29bb63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1983</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lompré, L. A.</creatorcontrib><creatorcontrib>Liu, J. M.</creatorcontrib><creatorcontrib>Kurz, H.</creatorcontrib><creatorcontrib>Bloembergen, N.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lompré, L. A.</au><au>Liu, J. M.</au><au>Kurz, H.</au><au>Bloembergen, N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Time-resolved temperature measurement of picosecond laser irradiated silicon</atitle><jtitle>Applied physics letters</jtitle><date>1983-01-01</date><risdate>1983</risdate><volume>43</volume><issue>2</issue><spage>168</spage><epage>170</epage><pages>168-170</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>Time-resolved reflectivity and transmission measurements of crystalline silicon films reveal lattice heating through the temperature dependence of the complex index of refraction. The temperature rise, which is much higher than derived by others from Raman scattering experiments, occurs in a surface layer of 100-nm thickness.</abstract><doi>10.1063/1.94268</doi><tpages>3</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0003-6951
ispartof Applied physics letters, 1983-01, Vol.43 (2), p.168-170
issn 0003-6951
1077-3118
language eng
recordid cdi_proquest_miscellaneous_24103247
source AIP Digital Archive
title Time-resolved temperature measurement of picosecond laser irradiated silicon
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T21%3A17%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Time-resolved%20temperature%20measurement%20of%20picosecond%20laser%20irradiated%20silicon&rft.jtitle=Applied%20physics%20letters&rft.au=Lompr%C3%A9,%20L.%20A.&rft.date=1983-01-01&rft.volume=43&rft.issue=2&rft.spage=168&rft.epage=170&rft.pages=168-170&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.94268&rft_dat=%3Cproquest_cross%3E24103247%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c322t-cdd420f322fea164bc012ed1aaa4b5bc30f7f43bb627be3e0015b88653b29bb63%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=24103247&rft_id=info:pmid/&rfr_iscdi=true