A two-stage monolithic IF amplifier utilizing a Ta2O5 capacitor

A two-stage monolithic IF amplifier incorporating a sputtered Ta2O5 capacitor has been fabricated. The monolithic capacitor is based on a composite layer structure consisting of Au, Ta, Ta2O5, Ta, and Au. This layered structure is sequentially deposited in a single sputtering run, which eliminates p...

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Published in:IEEE transactions on electron devices 1983-01, Vol.ED-30, p.21-26
Main Authors: Chu, A, Mahoney, L J, Courtney, W E, Finn, M C, Piacentini, W J, Donnelly, J P, Elta, M E
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container_title IEEE transactions on electron devices
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creator Chu, A
Mahoney, L J
Courtney, W E
Finn, M C
Piacentini, W J
Donnelly, J P
Elta, M E
description A two-stage monolithic IF amplifier incorporating a sputtered Ta2O5 capacitor has been fabricated. The monolithic capacitor is based on a composite layer structure consisting of Au, Ta, Ta2O5, Ta, and Au. This layered structure is sequentially deposited in a single sputtering run, which eliminates particulate contamination. As a result, a thin pinhole-free dielectric layer can be deposited over large areas, and 140-pF capacitors have been fabricated with excellent yields. The large unit area capacitance of 1500 pF/59 mm available with the present process has the potential for reducing the size of matching and bias circuits in microwave monolithic circuits and hybrid thin-film circuits. The monolithic amplifiers exhibit a gain of 17.5 + or - 1.0 dB from 1.2 to 2.6 GHz and a minimum noise figure of about 2.7 dB, with an associated gain of 17.5 dB at 1.7 GHz.
doi_str_mv 10.1109/T-ED.1983.21064
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title A two-stage monolithic IF amplifier utilizing a Ta2O5 capacitor
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