Monolithic integration of GaAs light-emitting diodes and Si metal-oxide-semiconductor field-effect transistors

A monolithic optoelectronic circuit, consisting of a GaAs light-emitting diode (LED) driven by a Si metal-oxide-semiconductor (MOS) transistor, has been fabricated. Light output as a function of applied gate voltage was measured. The LED’s were fabricated in GaAs layers on Ge-coated Si substrates co...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1986-02, Vol.48 (5), p.370-371
Main Authors: GHOSH, R. N, GRIFFING, B, BALLANTYNE, J. M
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A monolithic optoelectronic circuit, consisting of a GaAs light-emitting diode (LED) driven by a Si metal-oxide-semiconductor (MOS) transistor, has been fabricated. Light output as a function of applied gate voltage was measured. The LED’s were fabricated in GaAs layers on Ge-coated Si substrates containing MOS transistors. Normal transistor performance was observed after the GaAs LED fabrication, indicating that GaAs and Si processing technologies appear to be compatible.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.96555