Experimental performance of the buried-channel acoustic charge transport device

High-speed electron transport is accomplished in a new type of buried-channel charge transfer device which is based on the nonlinear acoustoelectric interaction between large amplitude surface acoustic waves (SAW) and electrons in GaAs. The performance of the acoustic charge transport (ACT) device i...

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Bibliographic Details
Published in:IEEE electron device letters 1983-11, Vol.4 (11), p.396-399
Main Authors: Hoskins, M.J., Bogus, E.G., Hunsinger, B.J.
Format: Article
Language:English
Subjects:
Acoustic devices
Acoustic measurements
Acoustic waves
Applied sciences
Charge coupled devices
Charge transfer devices
Clocks
Electronics
Electrons
Exact sciences and technology
Frequency measurement
Gallium arsenide
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Surface acoustic wave devices
Surface acoustic waves
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Summary:High-speed electron transport is accomplished in a new type of buried-channel charge transfer device which is based on the nonlinear acoustoelectric interaction between large amplitude surface acoustic waves (SAW) and electrons in GaAs. The performance of the acoustic charge transport (ACT) device is enhanced by design improvements which provide precise channel definition and charge injection structures. A transfer efficiency in excess of 0.996 has been measured in an experimental device operating at the SAW clock frequency of 358 MHz.
ISSN:0741-3106
1558-0563
DOI:10.1109/EDL.1983.25778