Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

Theory and extended experimental results for the large shift in optical absorption in GaAs--AlGaAs quantum well structures with electric field perpendicular to the layers are presented. In contrast to the Stark effect on atoms or on excitons in bulk semiconductors, the exciton resonances remain reso...

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Bibliographic Details
Published in:Physical review letters 1984-11, Vol.53 (22), p.2173-2176
Main Authors: Miller, D. A. B., Chemla, D. S., Damen, T. C., Gossard, A. C., Wiegmann, W., Wood, T. H., Burrus, C. A.
Format: Article
Language:English
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Summary:Theory and extended experimental results for the large shift in optical absorption in GaAs--AlGaAs quantum well structures with electric field perpendicular to the layers are presented. In contrast to the Stark effect on atoms or on excitons in bulk semiconductors, the exciton resonances remain resolved, even for shifts much larger than the zero-field binding energy and fields > 50 times the classical ionization field. The model explains these results as a consequence of the quantum confinement of carriers. 14 ref.--AA
ISSN:0031-9007
DOI:10.1103/physrevlett.53.2173