Zn incorporation in Ga sub(1-x)Al sub(x)As grown by liquid phase epitaxy and its electrical properties

Zn doped Ga sub(1-x)Al sub(x) layers with different Al concentrations (x = 0.2, 0.3, 0.6) have been grown by the conventional liquid phase epitaxy method (LPE). The Zn mole fraction in the liquid solution has been varied from 5 x 10 super(-4) to 5 x 10 super(-2) and the corresponding hole concentrat...

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Bibliographic Details
Published in:Journal of applied physics 1983-01, Vol.54 (8), p.4581-4585
Main Authors: Vassilieff, G, Saint-Cricq, B
Format: Article
Language:English
Online Access:Get full text
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Summary:Zn doped Ga sub(1-x)Al sub(x) layers with different Al concentrations (x = 0.2, 0.3, 0.6) have been grown by the conventional liquid phase epitaxy method (LPE). The Zn mole fraction in the liquid solution has been varied from 5 x 10 super(-4) to 5 x 10 super(-2) and the corresponding hole concentration in the solid has been studied using Hall measurements. The results are as follows: hole concentrations up to 10 super(18) cm super(-3) are easily obtained for a high x of 0.6. The hole concentration in the solid varies according to the square root of the Zn mole fraction in liquid (X super(1)@)uZ sub(n)), and varies as beta exp(- alpha x) for a given X super(1)@)dZ sub(n). A global relation has been derived which totally defined Zn incorporation in Ga sub(1-x)Al sub(x)As crystal.
ISSN:0021-8979