Observation of positronium states in strongly damaged semiconductors

Experimental results concerning positronium-like states (qPs) formation in Ge and GaAs semiconductor crystals irradiated by powerful laser pulses are presented, qPs states are supposed to be locallized in microcracks and microvoids near the surface of bulk crystals.

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Bibliographic Details
Published in:Physics letters. A 1984-10, Vol.105 (1), p.69-71
Main Authors: Pogrebnjak, A.D., Kuznetsov, M.F., Surov, Yu.P.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Other interactions of matter with particles and radiation
Physics
Positron annihilation
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Description
Summary:Experimental results concerning positronium-like states (qPs) formation in Ge and GaAs semiconductor crystals irradiated by powerful laser pulses are presented, qPs states are supposed to be locallized in microcracks and microvoids near the surface of bulk crystals.
ISSN:0375-9601
1873-2429
DOI:10.1016/0375-9601(84)90568-1