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Observation of positronium states in strongly damaged semiconductors
Experimental results concerning positronium-like states (qPs) formation in Ge and GaAs semiconductor crystals irradiated by powerful laser pulses are presented, qPs states are supposed to be locallized in microcracks and microvoids near the surface of bulk crystals.
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Published in: | Physics letters. A 1984-10, Vol.105 (1), p.69-71 |
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Language: | English |
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container_end_page | 71 |
container_issue | 1 |
container_start_page | 69 |
container_title | Physics letters. A |
container_volume | 105 |
creator | Pogrebnjak, A.D. Kuznetsov, M.F. Surov, Yu.P. |
description | Experimental results concerning positronium-like states (qPs) formation in Ge and GaAs semiconductor crystals irradiated by powerful laser pulses are presented, qPs states are supposed to be locallized in microcracks and microvoids near the surface of bulk crystals. |
doi_str_mv | 10.1016/0375-9601(84)90568-1 |
format | article |
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subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other interactions of matter with particles and radiation Physics Positron annihilation |
title | Observation of positronium states in strongly damaged semiconductors |
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