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Observation of positronium states in strongly damaged semiconductors

Experimental results concerning positronium-like states (qPs) formation in Ge and GaAs semiconductor crystals irradiated by powerful laser pulses are presented, qPs states are supposed to be locallized in microcracks and microvoids near the surface of bulk crystals.

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Published in:Physics letters. A 1984-10, Vol.105 (1), p.69-71
Main Authors: Pogrebnjak, A.D., Kuznetsov, M.F., Surov, Yu.P.
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Language:English
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creator Pogrebnjak, A.D.
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description Experimental results concerning positronium-like states (qPs) formation in Ge and GaAs semiconductor crystals irradiated by powerful laser pulses are presented, qPs states are supposed to be locallized in microcracks and microvoids near the surface of bulk crystals.
doi_str_mv 10.1016/0375-9601(84)90568-1
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subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Other interactions of matter with particles and radiation
Physics
Positron annihilation
title Observation of positronium states in strongly damaged semiconductors
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