Infrared reflectance evaluation of chemically vapor deposited β-SiC films grown on Si substrates

We use infrared reflectance from 400 to 4000 cm−1 to evaluate cubic SiC films grown by chemical vapor deposition on Si substrates. From different regions of the spectra we determine precise film thicknesses, estimate carrier concentrations in highly doped specimens, observe roughness at both film su...

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Bibliographic Details
Published in:Journal of applied physics 1986-08, Vol.60 (4), p.1479-1485
Main Authors: HOLM, R. T, KLEIN, P. H, NORDQUIST, P. E. R. JR
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Infrared and raman spectra and scattering
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Physics
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Summary:We use infrared reflectance from 400 to 4000 cm−1 to evaluate cubic SiC films grown by chemical vapor deposition on Si substrates. From different regions of the spectra we determine precise film thicknesses, estimate carrier concentrations in highly doped specimens, observe roughness at both film surfaces, and detect conducting regions at the interface. We show how the roughness and the interfacial conducting region introduce nonideality into the spectra. The method is nondestructive and the information can be obtained in less than 1 h after film growth.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.337275