Metalorganic chemical vapor deposition of GaAs on Si for solar cell applications

Gallium arsenide solar cells have been fabricated from epilayers grown directly on silicon substrates by atmospheric-pressure MOCVD. Growth parameters for the deposition of high-quality GaAs-on-Si films have been carefully studied and correlated with material properties. The use of a GaAs-AlAs super...

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Bibliographic Details
Published in:Journal of crystal growth 1986-09, Vol.77 (1), p.530-538
Main Authors: Vernon, S.M., Haven, V.E., Tobin, S.P., Wolfson, R.G.
Format: Article
Language:English
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Summary:Gallium arsenide solar cells have been fabricated from epilayers grown directly on silicon substrates by atmospheric-pressure MOCVD. Growth parameters for the deposition of high-quality GaAs-on-Si films have been carefully studied and correlated with material properties. The use of a GaAs-AlAs superlattice buffer region has been evaluated. Device results for photovoltaic cells have been correlated with deposition parameters and power conversion efficiencies of up to 7% have been achieved.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(86)90348-9