Metalorganic chemical vapor deposition of GaAs on Si for solar cell applications

Gallium arsenide solar cells have been fabricated from epilayers grown directly on silicon substrates by atmospheric-pressure MOCVD. Growth parameters for the deposition of high-quality GaAs-on-Si films have been carefully studied and correlated with material properties. The use of a GaAs-AlAs super...

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Published in:Journal of crystal growth 1986-09, Vol.77 (1), p.530-538
Main Authors: Vernon, S.M., Haven, V.E., Tobin, S.P., Wolfson, R.G.
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Language:English
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cited_by cdi_FETCH-LOGICAL-c337t-46587f99934d735bbf219e8be86065574fc9fea406c6b9827de72b16601d74a83
cites cdi_FETCH-LOGICAL-c337t-46587f99934d735bbf219e8be86065574fc9fea406c6b9827de72b16601d74a83
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creator Vernon, S.M.
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description Gallium arsenide solar cells have been fabricated from epilayers grown directly on silicon substrates by atmospheric-pressure MOCVD. Growth parameters for the deposition of high-quality GaAs-on-Si films have been carefully studied and correlated with material properties. The use of a GaAs-AlAs superlattice buffer region has been evaluated. Device results for photovoltaic cells have been correlated with deposition parameters and power conversion efficiencies of up to 7% have been achieved.
doi_str_mv 10.1016/0022-0248(86)90348-9
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title Metalorganic chemical vapor deposition of GaAs on Si for solar cell applications
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