Negative creep and recovery during high-temperature creep of MgO single crystals at low stresses

High-temperature creep equipment with very high precision has been used to measure the creep of MgO single crystals > 1948K and stresses < 4 MPa. A transition in exponent, n, from three at stresses higher than 2 MPa to almost unity at lower stress region was observed. On the basis of dislocati...

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Bibliographic Details
Published in:Journal of materials science 1986-09, Vol.21 (9), p.3147-3152
Main Authors: RAMESH, K. S, YASUDA, E, KIMURA, S
Format: Article
Language:English
Subjects:
Applied sciences
Exact sciences and technology
Other techniques and industries
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Summary:High-temperature creep equipment with very high precision has been used to measure the creep of MgO single crystals > 1948K and stresses < 4 MPa. A transition in exponent, n, from three at stresses higher than 2 MPa to almost unity at lower stress region was observed. On the basis of dislocation substructure studies, it is proposed that the kinetics of backflow are thought to be based on the local network refinement caused by the reverse movement of dislocations and that recovery is necessary before further movement of dislocation can occur. It is shown that the network theory proposed by Davis and Wilshire can satisfactorily account for all stress reduction observed during forward creep. 23 ref.--AA
ISSN:0022-2461
1573-4803
DOI:10.1007/BF00553350