Investigations of impact ionization phenomena in advanced transistors and speed-power improvement of BiMOS SRAM cells based on reverse base current effect

The experimental investigations of base reverse current of integrated Si polysilicon emitter bipolar transistor and its multiplication coefficients ( M−1) vs. U cb at different I E when the device is driven at constant emitter currents are represented. Current crowding effect induced by impact ioniz...

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Bibliographic Details
Published in:Microelectronics and reliability 2001, Vol.41 (2), p.219-228
Main Authors: Bubennikov, Alexander N, Zykov, Andrey V
Format: Article
Language:English
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Summary:The experimental investigations of base reverse current of integrated Si polysilicon emitter bipolar transistor and its multiplication coefficients ( M−1) vs. U cb at different I E when the device is driven at constant emitter currents are represented. Current crowding effect induced by impact ionization in advanced Si transistors and intrinsic complex instabilities and limitations affecting multiplication coefficients under variable high electric fields at low and high emitter current densities are analysed. The speed-power potential and limitations of high-density memory cells based on reverse base current effect are discussed. Speed-power possibilities and limitations of scaled down BiMOS SRAM cells are examined using numerical simulation of their capabilities to work in a memory system at different conditions.
ISSN:0026-2714
1872-941X
DOI:10.1016/S0026-2714(00)00092-5