InGaAsP superlattices grown by liquid-phase epitaxy

The liquid-phase epitaxy of InGaAsP periodic structures is reported. A conventional horizontal sliding boat or a computer-controlled rotating crucible was used to grow two types of structures. Stacks of thin layers grown from the same melt showed high-quality x-ray diffraction profiles, which are sh...

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Bibliographic Details
Published in:Journal of applied physics 1986-06, Vol.59 (12), p.4068-4072
Main Authors: BENCHIMOL, J. L, SLEMPKES, S, N'GUYEN, D. C, LE ROUX, G, BRESSE, J. F, PRIMOT, J
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:The liquid-phase epitaxy of InGaAsP periodic structures is reported. A conventional horizontal sliding boat or a computer-controlled rotating crucible was used to grow two types of structures. Stacks of thin layers grown from the same melt showed high-quality x-ray diffraction profiles, which are shown to allow a precise determination of layer thickness; supersaturation was found to significantly influence layer thickness for short growth times. In superlattices such as InP/InGaAsP or InGaAsP/InGaAs, good composition and thickness reproductibility throughout the structure was verified by Auger sputtering. The presence of satellite peaks in x-ray diffraction profiles clearly proved that periodicity was well achieved in these structures. Quantum effects were observed by photoluminescence in sufficiently small wells.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.336713