InGaAsP laser with semi-insulating current confining layers

The fabrication and performance characteristics of a InGaAsP laser structure with semi-insulating current confining layers are reported. The semi-insulating layers are Fe-doped InP and are grown using the metalorganic chemical vapor deposition growth technique. The lasers have threshold currents in...

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Bibliographic Details
Published in:Applied physics letters 1986-06, Vol.48 (23), p.1572-1573
Main Authors: DUTTA, N. K, ZILKO, J. L, CELLA, T, ACKERMAN, D. A, SHEN, T. M, NAPHOLTZ, S. G
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:The fabrication and performance characteristics of a InGaAsP laser structure with semi-insulating current confining layers are reported. The semi-insulating layers are Fe-doped InP and are grown using the metalorganic chemical vapor deposition growth technique. The lasers have threshold currents in the range 20–30 mA and external differential quantum efficiency ∼0.2 mW/mA/facet at 30 °C. The bandwidth for small-signal response is ∼2 GHz which suggests that the laser structure is suitable for high bit rate lightwave transmission systems. Initial aging results yield an estimated operating lifetime of 10 years at 20 °C.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.96871