Determination of lattice parameter and elastic properties of porous silicon by X-ray diffraction

Crystalline properties of porous silicon layers have been studied by X-ray diffraction. The difference in lattice parameter between the silicon substrate and the porous layer and the strains of the porous lattice have been determined accurately on a double crystal diffractometer for a series of poro...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 1984-01, Vol.68 (3), p.727-732
Main Authors: Barla, K., Herino, R., Bomchil, G., Pfister, J.C., Freund, A.
Format: Article
Language:English
Subjects:
Alloys
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Structure of solids and liquids
crystallography
Structure of specific crystalline solids
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Crystalline properties of porous silicon layers have been studied by X-ray diffraction. The difference in lattice parameter between the silicon substrate and the porous layer and the strains of the porous lattice have been determined accurately on a double crystal diffractometer for a series of porous structures. The results show that the porous silicon lattice is expanded with respect to the substrate and that the expansion increases with porosity. The combination of these data with measurements of the curvature has enabled the elastic constants for different porous structures to be derived.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(84)90111-8