p-channel strained quantum well, field-effect transistor

A p-channel field-effect transistor with a 3.5 μm Cr/Au gate was fabricated from a modulation-doped GaAs/In0.2Ga0.8As/GaAs quantum well structure. Well-behaved transistor action was observed at both 300 and 77 K with extrinsic transconductances of 6.2 and 11.3 mS/mm, respectively. Shubnikov–deHaas m...

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Bibliographic Details
Published in:Applied physics letters 1986-08, Vol.49 (8), p.461-463
Main Authors: DRUMMOND, T. J, ZIPPERIAN, T. E, FRITZ, I. J, SCHIRBER, J. E, PLUT, T. A
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:A p-channel field-effect transistor with a 3.5 μm Cr/Au gate was fabricated from a modulation-doped GaAs/In0.2Ga0.8As/GaAs quantum well structure. Well-behaved transistor action was observed at both 300 and 77 K with extrinsic transconductances of 6.2 and 11.3 mS/mm, respectively. Shubnikov–deHaas measurements prove the existence of a two-dimensional hole gas with a strain-shifted light-hole ground state associated with a light-hole mass of 0.154m0.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.97116