Fabrication of 20-nm structures in GaAs

Structures as small as 20 nm have been fabricated in GaAs by high-resolution electron beam lithography and reactive ion etching. NiCr patterns were formed on the semiconductor surface by liftoff of a single-layer electron beam resist. This metal mask pattern was transferred into the III-V material b...

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Bibliographic Details
Published in:Applied physics letters 1984-08, Vol.45 (4), p.410-412
Main Authors: STERN, M. B, CRAIGHEAD, H. G, LIAO, P. F, MANKIEWICH, P. M
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Structures as small as 20 nm have been fabricated in GaAs by high-resolution electron beam lithography and reactive ion etching. NiCr patterns were formed on the semiconductor surface by liftoff of a single-layer electron beam resist. This metal mask pattern was transferred into the III-V material by etching in a SiCl4 plasma
ISSN:0003-6951
1077-3118
DOI:10.1063/1.95239