Forming and Sintering Behavior of B- and C-Doped α and β-SiC

The effects of forming pressure and sintering temperature on shrinkuge, density, and phase composition of α‐ and β‐SiC were determined. Alpha SiC developed the 4H phase at the expense of the 6H phase at >2150°C. The beta form converted to the 6H phuse at >2000°C, with intermediate development...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 1984-04, Vol.67 (4), p.c62-c64
Main Authors: Williams, Robert M., Juterbock, Barbara N., Peters, Charles R., Whalen, Thomas J., Heuer, A.H.
Format: Article
Language:English
Subjects:
Applied sciences
Building materials. Ceramics. Glasses
Chemical industry and chemicals
Exact sciences and technology
Refractory products
Special refractories
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Summary:The effects of forming pressure and sintering temperature on shrinkuge, density, and phase composition of α‐ and β‐SiC were determined. Alpha SiC developed the 4H phase at the expense of the 6H phase at >2150°C. The beta form converted to the 6H phuse at >2000°C, with intermediate development of the 15R and 4H phases
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.1984.tb18829.x