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Forming and Sintering Behavior of B- and C-Doped alpha- and beta-SiC
A study of forming pressure and sintering temperature on the shrinkage, density and phase composition of both alpha- and beta-SiC has determined that the former develops the 4H phase at the expense of the 6H at temperatures above 2150 C, while the latter converted to the 6H phase above 2000 C with i...
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Published in: | Journal of the American Ceramic Society 1984-04, Vol.67, p.C-62 to C-64 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Online Access: | Get full text |
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Summary: | A study of forming pressure and sintering temperature on the shrinkage, density and phase composition of both alpha- and beta-SiC has determined that the former develops the 4H phase at the expense of the 6H at temperatures above 2150 C, while the latter converted to the 6H phase above 2000 C with intermediate development of the 15R and 4H phases. In beta-SiC, the cubic phase crystals of the starting material progressively transform to an elongated alpha polytype at 2000 C which is less conducive to additional sintering than a more equiaxed structure. |
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ISSN: | 0002-7820 |