Properties of indium tin oxide films prepared by ion-assisted deposition

• Published in: Thin solid films 1986-03, Vol.137 (2), p.207-214
• Main Authors: Martin, P.J., Netterfield, R.P., McKenzie, D.R.
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(86)90021-0

Conducting transparent films of indium tin oxide were deposited by 100 eV oxygen-ion-assisted deposition. A refractive index of 2.13 at 550 nm was obtained for films deposited onto ambient temperature substrates. The refractive index decreased with increasing substrate temperature to a value of 2.0 at 400°C. The sheet resistance of films 135 nm thick decreased from 800 Ω/□ for layers deposited onto room temperature substrates to around 25 Ω/□ at 400°C. Structural studies revealed that ion-assisted deposition onto ambient temperature substrates produced amorphous films, and that at temperatures above 100°C the films exhibit In 2O 3 crystallinity. In addition, it was found that the number of voids in the ion-bombarded films was reduced relative to that in films produced by conventional reactive evaporation.