Grain-size effects on electrical properties of n-type polycrystalline chemical vapor deposition Si films

The electrical properties of phosphorus-doped n-type polycrystalline Si films deposited by chemical vapor deposition were investigated as a function of both impurity concentration and average grain sizes in the films. Sets of simultaneously grown films with average grains ranging from 100 μm have be...

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Bibliographic Details
Published in:Journal of applied physics 1984-04, Vol.55 (8), p.2995-2999
Main Authors: YANG, J. J, SIMPSON, W. I, MANASEVIT, H. M, RUTH, R. P
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Physics
Surface conductivity and carrier phenomena
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Summary:The electrical properties of phosphorus-doped n-type polycrystalline Si films deposited by chemical vapor deposition were investigated as a function of both impurity concentration and average grain sizes in the films. Sets of simultaneously grown films with average grains ranging from 100 μm have been deposited on polished selected polycrystalline high-purity alumina substrates. The impurity concentrations were in the range 1015–1018 cm−3. The transport properties of the n-type polycrystalline films have been determined by Hall-effect measurements as a function of sample temperature in the range 77–420 °K using the van der Pauw technique. The experimental results are interpreted in terms of a grain-boundary model.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.333290