GaAs light-emitting diodes fabricated on Ge-coated Si substrates

Light-emitting diodes have been fabricated in GaAs grown by metalorganic chemical vapor deposition on vapor-deposited epitaxial Ge films on Si substrates. The light-emitting junction was formed by zinc diffusion into the n-type GaAs layer. Room-temperature light emission centered at 872 nm has been...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters 1984-05, Vol.44 (10), p.967-969
Main Authors: FLETCHER, R. M, WAGNER, D. K, BALLANTYNE, J. M
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Optoelectronic devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Light-emitting diodes have been fabricated in GaAs grown by metalorganic chemical vapor deposition on vapor-deposited epitaxial Ge films on Si substrates. The light-emitting junction was formed by zinc diffusion into the n-type GaAs layer. Room-temperature light emission centered at 872 nm has been observed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.94613