Growth kinetics in LPE of the Ga-In-P-As system

A theoretical analysis of the growth kinetics for quaternary Ga x In 1− x P y As 1− y grown in an InP substrate is carried out in terms of the diffusion-limited growth model. The influence of growth temperature, composition of the initial liquid phase and supercooling of the system on the compositio...

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Bibliographic Details
Published in:Journal of crystal growth 1984-05, Vol.66 (3), p.562-574
Main Authors: Kuznetsov, V.V., Moskvin, P.P., Sorokin, V.S.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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Summary:A theoretical analysis of the growth kinetics for quaternary Ga x In 1− x P y As 1− y grown in an InP substrate is carried out in terms of the diffusion-limited growth model. The influence of growth temperature, composition of the initial liquid phase and supercooling of the system on the composition and growth rate of the epilayers is studied. The calculated data are compared with experimental data on the solid solution grown by the step-cooling technique.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(84)90155-6