Hole mobility in p-type HgTe

Experimental data concerning the electrical conduction and Hall coefficient in HgTe samples with acceptor states have been collected and analysed. In the analysis three ranges of acceptor concentration have been distinguished: a low concentration range up to about 5 × 10 15 cm −3 (pure samples), a h...

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Bibliographic Details
Published in:The Journal of physics and chemistry of solids 1984, Vol.45 (1), p.97-103
Main Authors: Dziuba, Z., Szlenk, K.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Low-field transport and mobility
piezoresistance
Physics
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Summary:Experimental data concerning the electrical conduction and Hall coefficient in HgTe samples with acceptor states have been collected and analysed. In the analysis three ranges of acceptor concentration have been distinguished: a low concentration range up to about 5 × 10 15 cm −3 (pure samples), a high concentration range from 10 16 to 10 18 cm −3 ( p-like samples), and an extremely high concentration range above 10 18 cm −3 ( p-type samples). In pure HgTe samples the holes are in the valence band, in p-like samples the “holes” are in the impurity band, and in p-type HgTe samples the holes are in a strong mixing impurity-valence band. The mobility of holes in the valence band is of the order of 10 5 cm 2 Vs . The mobility of “holes” in the impurity band decreases with increasing impurity concentration from about 5 × 10 3 cm 2 Vs to 125 cm 2 Vs . The mobility of holes in p-type HgTe samples is independent of the acceptor concentration and is equal to 125 cm 2 Vs .
ISSN:0022-3697
1879-2553
DOI:10.1016/0022-3697(84)90106-9