GaAs sub --x Sb sub x Growth by OMVPE

The system GaAs sub 1--x Sb sub x has a solid-phase miscibility gap ranging from x = 0.2 to x = 0.8 at the typical growth temp. of 600 deg C; however, metastable alloys covering this entire composition range have been grown by organometallic vapor phase epitaxy (OMVPE) using trimethyl-gallium, -anti...

Full description

Saved in:
Bibliographic Details
Published in:Journal of electronic materials 1984-09, Vol.13 (5), p.799-813
Main Authors: Cherng, M J, Cohen, R M, Stringfellow, G B
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The system GaAs sub 1--x Sb sub x has a solid-phase miscibility gap ranging from x = 0.2 to x = 0.8 at the typical growth temp. of 600 deg C; however, metastable alloys covering this entire composition range have been grown by organometallic vapor phase epitaxy (OMVPE) using trimethyl-gallium, -antimony and -arsenic as the source materials. The solid composition is studied for various values of growth temp., the ratio of Sb to total Group V elements in the vapor phase and the ratio of Group III to Group V elements in the vapor phase. The effects of temp. and vapor composition are all accurately predicted using a simple thermodynamic model assuming equilibrium to be established at the solid/vapor interface. The alloy GaAs sub 0.5 Sb sub 0.5 grown lattice matched to the InP substrate has excellent surface morphology, is p-type and the photoluminescence spectrum consists of a single, intense, fairly broad (23.5 meV half width) peak at a wavelength of 1.54 mu m. 19 ref.--AA
ISSN:0361-5235