Resistive contrast imaging: A new SEM mode for failure analysis

Semiconductor device path resistance is obtained from scanning electron microscope (SEM) images using a modified electron-beam-induced current (EBIC) mode. We call this new method resistance contrast imaging (RCI). The intensity of these images is proportional to internal device resistance ratios. A...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1986-02, Vol.33 (2), p.282-285
Main Authors: Smith, C.A., Bagnell, C.R., Cole, E.I., DiBianca, F.A., Johnson, D.G., Oxford, W.V., Propst, R.H.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Integrated circuits
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Semiconductor device path resistance is obtained from scanning electron microscope (SEM) images using a modified electron-beam-induced current (EBIC) mode. We call this new method resistance contrast imaging (RCI). The intensity of these images is proportional to internal device resistance ratios. Applications of the RCI method to device failure analysis are presented. This method is non-destructive and applicable to passivated devices.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1986.22479