Electrical characteristics of amorphous molybdenum-nickel contacts to silicon

The electrical characteristics of sputtered, amorphous Mo-Ni contacts have been measured on both p- and n-type Si, as functions of composition (30, 54, and 58 at. percent Mo). The contact resistivity on both p(+) and n(+) Si is in the 0.00000 ohm sq cm range. The barrier height for as-deposited samp...

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Bibliographic Details
Published in:Journal of applied physics 1984-05, Vol.55 (10), p.3882-3885
Main Authors: Kung, K. T.-Y., Nicolet, M.-A., Suni, I.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Solid-State Physics
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Summary:The electrical characteristics of sputtered, amorphous Mo-Ni contacts have been measured on both p- and n-type Si, as functions of composition (30, 54, and 58 at. percent Mo). The contact resistivity on both p(+) and n(+) Si is in the 0.00000 ohm sq cm range. The barrier height for as-deposited samples varies between phi-bp = 0.47-0.42 V on p-type Si and between phi-bn = 0.63-0.68 V on n-type Si, as the composition of the amorphous layer goes from Ni-rich to Mo-rich. The sum phi-bp + phi-bn always equals 1.12 V, within experimental error. After thermal treatment at 500 C for 1/2 h, the contact resistivity changes by a factor of two or less, while the barrier height changes by at most approximately 0.05 V. In light of these results, the amorphous Mo-Ni film makes good ohmic contacts to silicon.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.332905