AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate

AlGaAs double-heterostructure diode lasers have been fabricated for the first time on a monolithic GaAs/Si substrate. The heterostructure was prepared by growth of a series of GaAs and AlGaAs layers on a Ge-coated Si wafer. For pulsed operation at 77 K the lowest threshold current was 260 mA, the hi...

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Bibliographic Details
Published in:Applied physics letters 1984-08, Vol.45 (4), p.309-311
Main Authors: WINDHORN, T. H, METZE, G. M, TSAUR, B.-Y, FAN, J. C. C
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:AlGaAs double-heterostructure diode lasers have been fabricated for the first time on a monolithic GaAs/Si substrate. The heterostructure was prepared by growth of a series of GaAs and AlGaAs layers on a Ge-coated Si wafer. For pulsed operation at 77 K the lowest threshold current was 260 mA, the highest power output was 1.8 mW per facet, and the highest differential quantum efficiency was 1.2%.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.95273