Silicon-to-silicon direct bonding method

It was found that strong bonding takes place when a pair of clean, mirror-polished silicon surfaces are contacted at room temperature after hydrophilic surface formation. Bonding strength reaches the fracture strength of silicon bulk after heating above 1000 °C. Electric resistivity at the interface...

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Bibliographic Details
Published in:Journal of applied physics 1986-10, Vol.60 (8), p.2987-2989
Main Authors: SHIMBO, M, FURUKAWA, K, FUKUDA, K, TANZAWA, K
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:It was found that strong bonding takes place when a pair of clean, mirror-polished silicon surfaces are contacted at room temperature after hydrophilic surface formation. Bonding strength reaches the fracture strength of silicon bulk after heating above 1000 °C. Electric resistivity at the interface is less than 10−6 Ω/cm2. Bonding p-type silicon to n-type silicon forms a diode. The reaction between silanol groups formed on the surface may cause the bonding force. Heating above 1000 °C was thought to diffuse oxygen to inside the silicon bulk, forming an epitaxial-like lattice continuity at the interface.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.337750