Space-charge-limited conduction in rf-sputtered pure and vanadium-doped amorphous SiO sub 2 films

Study of the dc electrical properties of pure films included a few samples doped with V ions of energy 280 keV after annealing in N sub 2 . Some samples underwent cosputtering with V. Attention focused on the effects of sputtering, implantation, and post-deposition annealing treatment on I-V and C-V...

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Bibliographic Details
Published in:Thin solid films 1986-01, Vol.145 (2), p.161-170
Main Author: Eze, F C
Format: Article
Language:English
Online Access:Get full text
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Summary:Study of the dc electrical properties of pure films included a few samples doped with V ions of energy 280 keV after annealing in N sub 2 . Some samples underwent cosputtering with V. Attention focused on the effects of sputtering, implantation, and post-deposition annealing treatment on I-V and C-V characteristics.
ISSN:0040-6090