Mid-gap electron traps (EL2 family) in GaAs

Peculiar properties of mid-gap levels in GaAs (EL2 family) are summarized, and to explain these properties a new model for EL2 family, arsenic aggregates, is presented and discussed.

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Bibliographic Details
Published in:Microelectronic engineering 1984, Vol.2 (1), p.137-143
Main Authors: Ikoma, Toshiaki, Taniguchi, Mitsuhiro, Mochizuki, Yasunori
Format: Article
Language:English
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Description
Summary:Peculiar properties of mid-gap levels in GaAs (EL2 family) are summarized, and to explain these properties a new model for EL2 family, arsenic aggregates, is presented and discussed.
ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(84)90058-3