Monolithic integration of an InGaAsP/InP laser diode with heterojunction bipolar transistors

A monolithic integration of an InGaAsP laser diode together with current supplying circuit on a single InP substrate has been achieved. Heterojunction bipolar transistors (HBT’s) have been constructed utilizing the burying epitaxial layers of the buried heterostructure laser diode. The laser has bee...

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Bibliographic Details
Published in:Applied physics letters 1984-08, Vol.45 (3), p.191-193
Main Authors: SHIBATA, J, NAKAO, I, SASAI, Y, KIMURA, S, HASE, N, SERIZAWA, H
Format: Article
Language:English
Subjects:
Applied sciences
Exact sciences and technology
Systems, networks and services of telecommunications
Telecommunications
Telecommunications and information theory
Transmission and modulation (techniques and equipments)
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Summary:A monolithic integration of an InGaAsP laser diode together with current supplying circuit on a single InP substrate has been achieved. Heterojunction bipolar transistors (HBT’s) have been constructed utilizing the burying epitaxial layers of the buried heterostructure laser diode. The laser has been successfully modulated up to 1.6 GHz through the HBT’s driving circuit with sinusoidal electrical signal.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.95205