Metal-semiconductor field-effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxy

Device-quality GaAs layers have been grown directly on Si(100) substrates by molecular beam epitaxy. Metal-semiconductor field-effect transistors have been fabricated in these layers with transconductance as high as 85 mS/mm and leakage current as low as 1 μA at Vgs =−3 V for gate dimensions of 2.0...

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Bibliographic Details
Published in:Applied physics letters 1984-11, Vol.45 (10), p.1107-1109
Main Authors: METZE, G. M, CHOI, H. K, TSAUR, B.-Y
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:Device-quality GaAs layers have been grown directly on Si(100) substrates by molecular beam epitaxy. Metal-semiconductor field-effect transistors have been fabricated in these layers with transconductance as high as 85 mS/mm and leakage current as low as 1 μA at Vgs =−3 V for gate dimensions of 2.0 μm×200 μm.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.95033