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Numerical modeling of vertical Hall-effect devices

A two-dimensional numerical simulation of the unconventional Hall device recently proposed by Popovic is presented. Some improved and simplified alternative device structures are proposed and simulated as well.

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Published in:	IEEE electron device letters 1984-11, Vol.5 (11), p.482-484
Main Authors:	Huiser, A.M.J., Baltes, H.P.
Format:	Article
Language:	English
Subjects:	Applied sciences Boundary conditions Current density Electrodes Electron mobility Electronics Exact sciences and technology Geometry Hall effect Hall effect devices Integral equations Magnetic fields Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics Numerical models Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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description	A two-dimensional numerical simulation of the unconventional Hall device recently proposed by Popovic is presented. Some improved and simplified alternative device structures are proposed and simulated as well.
doi_str_mv	10.1109/EDL.1984.25996
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source	IEEE Electronic Library (IEL) Journals
subjects	Applied sciences Boundary conditions Current density Electrodes Electron mobility Electronics Exact sciences and technology Geometry Hall effect Hall effect devices Integral equations Magnetic fields Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics Numerical models Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title	Numerical modeling of vertical Hall-effect devices
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