InSb Devices: Transphasors with High Gain, Bistable Switches and Sequential Logic Gates

InSb etalons operated at 77 K and illuminated by CO lasers (5.5 μ m) exhibit continuous wave (c.w.) optical bistability. A wide range of experiments have been performed to further the basic characterization of these devices and to demonstrate their various potential applications. The latter include...

Full description

Saved in:
Bibliographic Details
Published in:Philosophical transactions of the Royal Society of London. Series A: Mathematical and physical sciences 1984-12, Vol.313 (1525), p.249-256
Main Authors: Walker, A. C., Tooley, F. A. P., Prise, M. E., Mathew, J. G. H., Kar, A. K., Taghizadeh, M. R., Smith, S. D.
Format: Article
Language:English
Subjects:
Experimental results
Input output
Irradiance
Laser beams
Lasers
Narrative devices
Nonlinearity
Optical bistability
Semiconductor lasers
Temperature effects
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:InSb etalons operated at 77 K and illuminated by CO lasers (5.5 μ m) exhibit continuous wave (c.w.) optical bistability. A wide range of experiments have been performed to further the basic characterization of these devices and to demonstrate their various potential applications. The latter include signal amplification, modulation and, with external switching, the construction of logic gates. Two devices on a single etalon have now been coupled to form a simple all-optical circuit. New results have also been obtained with InSb at room temperature with pulsed CO2lasers (10.6 μ m).
ISSN:0080-4614