Hole-mediated ferromagnetism in a high-magnetic moment material, Gd-doped GaN

As an exotic material in spintronics, Gd-doped GaN is known as a room temperature ferromagnetic material that possesses a large magnetic moment (4000 μB per Gd ion). This paper theoretically proposes that the large magnetic moment and room temperature ferromagnetism observed in Gd-doped GaN is cause...

Full description

Saved in:
Bibliographic Details
Published in:Journal of physics. Condensed matter 2020-11, Vol.32 (48), p.485803
Main Authors: Masago, Akira, Shinya, Hikari, Fukushima, Tetsuya, Sato, Kazunori, Katayama-Yoshida, Hiroshi
Format: Article
Language:English
Subjects:
cation-vacancy-induced ferromagnetism
gadolinium-doped gallium nitride
room-temperature ferromagnetism
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:As an exotic material in spintronics, Gd-doped GaN is known as a room temperature ferromagnetic material that possesses a large magnetic moment (4000 μB per Gd ion). This paper theoretically proposes that the large magnetic moment and room temperature ferromagnetism observed in Gd-doped GaN is caused by N 2p holes based on the assumption that Ga-vacancies result from the introduction of Gd ions. This causes that the too large magnetic moment is estimated for Gd ions if only Gd ions contributed the magnetic moment.
ISSN:0953-8984
1361-648X
DOI:10.1088/1361-648X/abac8e