Nitridization of gallium arsenide surfaces: effects on diode leakage currents

Nitridization of GaAs surfaces by exposure to a nitrogen or nitrogen-hydrogen plasma is known to form a surface coating rich in GaN. We show that pretreatment in a hydrogen plasma at room temperature followed by production of this wider band-gap material by nitrogen plasma treatment at 500 °C for 5...

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Bibliographic Details
Published in:Applied physics letters 1984-04, Vol.44 (7), p.684-686
Main Authors: PEARTON, S. J, HALLER, E. E, ELLIOT, A. G
Format: Article
Language:English
Subjects:
Applied sciences
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Nitridization of GaAs surfaces by exposure to a nitrogen or nitrogen-hydrogen plasma is known to form a surface coating rich in GaN. We show that pretreatment in a hydrogen plasma at room temperature followed by production of this wider band-gap material by nitrogen plasma treatment at 500 °C for 5 h reduces the reverse leakage current of Au-GaAs (ND−NA =5×1017 cm−3) Schottky diodes by typically an order of magnitude at 300 K.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.94877