On the properties of InSb quantum wells

A brief survey of the properties of InSb quantum wells is reported. The energy level scheme is described on the basis of a square-well model taking into account the pronounced non-parabolicity of the conduction band. A simple model for electron transport with polar optical mode scattering is present...

Full description

Saved in:
Bibliographic Details
Published in:Solid-state electronics 1984-01, Vol.27 (2), p.113-120
Main Authors: van Welzenis, R.G., Ridley, B.K.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Interfaces
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A brief survey of the properties of InSb quantum wells is reported. The energy level scheme is described on the basis of a square-well model taking into account the pronounced non-parabolicity of the conduction band. A simple model for electron transport with polar optical mode scattering is presented. The temperature dependence of the low-field electron mobility is calculated for various well-widths. Threshold fields for negative differential resistance and for energy runaway are estimated. Threshold energies for impact ionization, including resonance effects involving the electronic sub-bands are also obtained. Novel features expected of InSb quantum wells are summarized and discussed.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(84)90101-1