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Theoretical analysis of explosively propagating molten layers in pulsed-laser-irradiated a-Si
Nanosecond-pulsed-laser melting of amorphous (a) Si on crystalline (c) Si substrates produces a highly undercooled liquid (l) that solidifies into a complex morphology. Recently developed techniques for including undercooling, interface kinetics, and nucleation in heat-flow calculations are used to...
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Published in: | Physical review letters 1986-08, Vol.57 (7), p.873-876 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Nanosecond-pulsed-laser melting of amorphous (a) Si on crystalline (c) Si substrates produces a highly undercooled liquid (l) that solidifies into a complex morphology. Recently developed techniques for including undercooling, interface kinetics, and nucleation in heat-flow calculations are used to analyze the experimental results. It is shown how explosive crystallization, involving the difference in the a- and c-phase latent heats, can produce a nearly self-sustaining crystallization front mediated by a thin l layer. (Author) |
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ISSN: | 0031-9007 1079-7114 |
DOI: | 10.1103/PhysRevLett.57.873 |