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Theoretical analysis of explosively propagating molten layers in pulsed-laser-irradiated a-Si

Nanosecond-pulsed-laser melting of amorphous (a) Si on crystalline (c) Si substrates produces a highly undercooled liquid (l) that solidifies into a complex morphology. Recently developed techniques for including undercooling, interface kinetics, and nucleation in heat-flow calculations are used to...

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Bibliographic Details
Published in:Physical review letters 1986-08, Vol.57 (7), p.873-876
Main Authors: WOOD, R. F, GEIST, G. A
Format: Article
Language:English
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Summary:Nanosecond-pulsed-laser melting of amorphous (a) Si on crystalline (c) Si substrates produces a highly undercooled liquid (l) that solidifies into a complex morphology. Recently developed techniques for including undercooling, interface kinetics, and nucleation in heat-flow calculations are used to analyze the experimental results. It is shown how explosive crystallization, involving the difference in the a- and c-phase latent heats, can produce a nearly self-sustaining crystallization front mediated by a thin l layer. (Author)
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.57.873