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Picosecond dynamics of electron-hole plasma in GaAs/AlAs multiple quantum well structure
Picosecond temporal character of high-density electron-hole plasma (EHP) in GaAs/AlAs multiple quantum well structure has been studied by means of time-resolved luminescence spectroscopy. The EHP with carrier density N QW of 3–4×10 17 cm -3 is formed, where carrier induced band-gap shrinkage of 10–2...
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Published in: | Japanese Journal of Applied Physics 1984-06, Vol.23 (6), p.L427-L429 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Picosecond temporal character of high-density electron-hole plasma (EHP) in GaAs/AlAs multiple quantum well structure has been studied by means of time-resolved luminescence spectroscopy. The EHP with carrier density
N
QW
of 3–4×10
17
cm
-3
is formed, where carrier induced band-gap shrinkage of 10–20 meV takes place. Temporal character of luminescence due to the EHP is well explained by time variation of
N
QW
. Increase of
N
QW
results from carrier trapping with trapping time of ∼60 ps, and subsequent decrease of
N
QW
results from radiative recombination with bimolecular recombination coefficient of 4.5×10
-8
cm
3
s
-1
. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/jjap.23.l427 |