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Picosecond dynamics of electron-hole plasma in GaAs/AlAs multiple quantum well structure

Picosecond temporal character of high-density electron-hole plasma (EHP) in GaAs/AlAs multiple quantum well structure has been studied by means of time-resolved luminescence spectroscopy. The EHP with carrier density N QW of 3–4×10 17 cm -3 is formed, where carrier induced band-gap shrinkage of 10–2...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1984-06, Vol.23 (6), p.L427-L429
Main Authors: TANAKA, S, KUNO, M, YAMAMOTO, A, KOBAYASHI, H, MIZUTA, M, KUKIMOTO, H, SAITO, H
Format: Article
Language:English
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Summary:Picosecond temporal character of high-density electron-hole plasma (EHP) in GaAs/AlAs multiple quantum well structure has been studied by means of time-resolved luminescence spectroscopy. The EHP with carrier density N QW of 3–4×10 17 cm -3 is formed, where carrier induced band-gap shrinkage of 10–20 meV takes place. Temporal character of luminescence due to the EHP is well explained by time variation of N QW . Increase of N QW results from carrier trapping with trapping time of ∼60 ps, and subsequent decrease of N QW results from radiative recombination with bimolecular recombination coefficient of 4.5×10 -8 cm 3 s -1 .
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.23.l427