A new MOVPE technique for the growth of highly uniform CMT

A new method for growing cadmium mercury telluride (CMT) is described where alternate thin layers of CdTe and HgTe are grown by metalorganic vapour phase epitaxy (MOVPE) and allowed to interdiffuse at the growth temperature. Using this technique epitaxial layers have been grown with both good depth...

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Bibliographic Details
Published in:Journal of crystal growth 1984-09, Vol.68 (1), p.245-253
Main Authors: Tunnicliffe, J., Irvine, S.J.C., Dosser, O.D., Mullin, J.B.
Format: Article
Language:English
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Summary:A new method for growing cadmium mercury telluride (CMT) is described where alternate thin layers of CdTe and HgTe are grown by metalorganic vapour phase epitaxy (MOVPE) and allowed to interdiffuse at the growth temperature. Using this technique epitaxial layers have been grown with both good depth and lateral uniformity and a reflective surface finish. Preliminary electrical measurements indicate that for the best layers the electrical properties are dominated by mercury vacancies rather than impurities.
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(84)90423-8