Temperature and intensity dependence of photorefractive effect in GaAs

The photorefractive effect in semi-insulating Cr-doped GaAs as measured by the beam coupling technique was investigated as functions of temperature (295-386 K) and intensity (0.15-98 mW/sq cm of 1.15-micron light beams from a He-Ne laser). Results show that the photorefractive effect deteriorates ra...

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Bibliographic Details
Published in:Applied physics letters 1986-11, Vol.49 (21), p.1456-1458
Main Authors: Cheng, Li-Jen, Partovi, Afshin
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of bulk materials and thin films
Physics
Solid-State Physics
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Summary:The photorefractive effect in semi-insulating Cr-doped GaAs as measured by the beam coupling technique was investigated as functions of temperature (295-386 K) and intensity (0.15-98 mW/sq cm of 1.15-micron light beams from a He-Ne laser). Results show that the photorefractive effect deteriorates rapidly over a narrow range of temperature as temperature rises, and that this characteristic temperature increases with the logarithm of beam intensity. The observed phenomenon is attributed to the competing effects of the dark- and light-induced conductivities.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.97301