Critical resolved shear stress measurements for silicon-doped GaAs single crystals

The critical resolved shear stress of GaAs single crystals doped with silicon was directly measured using dynamical compression tests at high temperatures. At the melting point the critical resolved shear stress is 0.032 and 0.027 kg/mm2 for crystals doped with 1.5×1018 and 3×1018 cm−3 silicon, resp...

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Bibliographic Details
Published in:Applied physics letters 1987-05, Vol.50 (19), p.1373-1375
Main Authors: BOURRET, E. D, TABACHE, M. G, ELLIOT, A. G
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: structure, mechanical and thermal properties
Deformation and plasticity (including yield, ductility, and superplasticity)
Exact sciences and technology
Mechanical and acoustical properties of condensed matter
Mechanical properties of solids
Other techniques and industries
Physics
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Summary:The critical resolved shear stress of GaAs single crystals doped with silicon was directly measured using dynamical compression tests at high temperatures. At the melting point the critical resolved shear stress is 0.032 and 0.027 kg/mm2 for crystals doped with 1.5×1018 and 3×1018 cm−3 silicon, respectively. These values are lower than that for undoped GaAs. This reinforces our earlier conclusion that solid solution hardening and the reduction of crystallographic glide is not the only mechanism by which dopants reduce the formation of dislocations during the growth of single crystals from the melt.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.97860