Selected area, stationary beam cratering for high sensitivity depth profiling with a computerized Auger microprobe

The use of improved methods of “crater edge profiling” as a viable alternative to conventional depth profiling by sputter etching and Auger analysis is discussed. The emphasis is placed upon utilizing a stationary ion beam (full width at half- maximum, about 200 μm) from a differentially pumped gun,...

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Bibliographic Details
Published in:Thin solid films 1984-05, Vol.115 (3), p.217-228
Main Authors: Poppa, Helmut, Cota-Araiza, Leonel
Format: Article
Language:English
Subjects:
Applied sciences
Corrosion
Corrosion mechanisms
Exact sciences and technology
Metals. Metallurgy
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Summary:The use of improved methods of “crater edge profiling” as a viable alternative to conventional depth profiling by sputter etching and Auger analysis is discussed. The emphasis is placed upon utilizing a stationary ion beam (full width at half- maximum, about 200 μm) from a differentially pumped gun, the beam of which can be selectively positioned on the sample surface for localized cratering. A variety of samples of Au/Cu, Au/Zr, Ag/Si and silicon either uncoated or coated in situ with metal were used for demonstrating different aspects of this experimental approach and for mapping with Auger, secondary and elastically backscattered electrons. A thin oxide layer on silicon ( d OX ≈ 1.2 nm) was very easily detected and measured by line scans across shallow craters (tan α ≈ 10 -5).
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(84)90182-2