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dc characterization of the AlGaAs/GaAs tunneling emitter bipolar transistor
AlGaAs/GaAs tunneling emitter bipolar transistors (TEBT’s), grown by molecular beam epitaxy, have been fabricated. Device structures with two different tunneling barrier Al mole fractions and each for two different barrier thicknesses were characterized at room temperature. A differential current ga...
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Published in: | Applied physics letters 1987-06, Vol.50 (26), p.1915-1917 |
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container_end_page | 1917 |
container_issue | 26 |
container_start_page | 1915 |
container_title | Applied physics letters |
container_volume | 50 |
creator | NAJJAR, F. E RADULESCU, D. C CHEN, Y.-K WICKS, G. W TASKER, P. J EASTMAN, L. F |
description | AlGaAs/GaAs tunneling emitter bipolar transistors (TEBT’s), grown by molecular beam epitaxy, have been fabricated. Device structures with two different tunneling barrier Al mole fractions and each for two different barrier thicknesses were characterized at room temperature. A differential current gain of 410 was achieved using a single 50 Å AlAs tunneling barrier. Devices with either thinner barriers (20 Å) or Al0.38Ga0.62As barriers had lower gains. Al0.24Ga0.76As/GaAs heterojunction bipolar transistors and GaAs homojunction bipolar transistors without tunneling barriers were also fabricated and characterized, for comparison. The performance of the homojunction devices was improved in all cases by inserting the tunneling barrier. The variations of the base and collector currents were measured for all devices and, for the TEBT’s they showed a functional dependence on the interfacial barrier Al mole fraction and thickness, which was attributed to carrier tunneling through the barrier. Furthermore, the above characteristics exhibit a clear electron-to-hole preferential tunneling. |
doi_str_mv | 10.1063/1.97685 |
format | article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_24409394</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>24409394</sourcerecordid><originalsourceid>FETCH-LOGICAL-c349t-e579f02893ba2422d460c45a0e9765437a106349c70e8ceaf687414c178337b23</originalsourceid><addsrcrecordid>eNo9kEtLAzEQx4MoWKv4FXIQPW2b9-NYilax4EXPYZpmbSTdrUl60E_v1oqXGQZ-_B-D0DUlE0oUn9KJ1crIEzSiROuGU2pO0YgQwhtlJT1HF6V8DKdknI_Q89pjv4EMvoYcv6HGvsN9i-sm4FlawKxMDwPXfdeFFLt3HLaxDixexV2fIOOaoSux1D5forMWUglXf3uM3h7uX-ePzfJl8TSfLRvPha1NkNq2hBnLV8AEY2uhiBcSSBiCS8E1HHoI6zUJxgdoldGCCk-14VyvGB-j26PuLvef-1Cq28biQ0rQhX5fHBOCWG7FAN4dQZ_7UnJo3S7HLeQvR4k7mDjqfp81kDd_klA8pHbo5GP5x7USRCrDfwDOZGbn</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>24409394</pqid></control><display><type>article</type><title>dc characterization of the AlGaAs/GaAs tunneling emitter bipolar transistor</title><source>AIP Digital Archive</source><creator>NAJJAR, F. E ; RADULESCU, D. C ; CHEN, Y.-K ; WICKS, G. W ; TASKER, P. J ; EASTMAN, L. F</creator><creatorcontrib>NAJJAR, F. E ; RADULESCU, D. C ; CHEN, Y.-K ; WICKS, G. W ; TASKER, P. J ; EASTMAN, L. F</creatorcontrib><description>AlGaAs/GaAs tunneling emitter bipolar transistors (TEBT’s), grown by molecular beam epitaxy, have been fabricated. Device structures with two different tunneling barrier Al mole fractions and each for two different barrier thicknesses were characterized at room temperature. A differential current gain of 410 was achieved using a single 50 Å AlAs tunneling barrier. Devices with either thinner barriers (20 Å) or Al0.38Ga0.62As barriers had lower gains. Al0.24Ga0.76As/GaAs heterojunction bipolar transistors and GaAs homojunction bipolar transistors without tunneling barriers were also fabricated and characterized, for comparison. The performance of the homojunction devices was improved in all cases by inserting the tunneling barrier. The variations of the base and collector currents were measured for all devices and, for the TEBT’s they showed a functional dependence on the interfacial barrier Al mole fraction and thickness, which was attributed to carrier tunneling through the barrier. Furthermore, the above characteristics exhibit a clear electron-to-hole preferential tunneling.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.97685</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>Applied physics letters, 1987-06, Vol.50 (26), p.1915-1917</ispartof><rights>1988 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c349t-e579f02893ba2422d460c45a0e9765437a106349c70e8ceaf687414c178337b23</citedby><cites>FETCH-LOGICAL-c349t-e579f02893ba2422d460c45a0e9765437a106349c70e8ceaf687414c178337b23</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7640568$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>NAJJAR, F. E</creatorcontrib><creatorcontrib>RADULESCU, D. C</creatorcontrib><creatorcontrib>CHEN, Y.-K</creatorcontrib><creatorcontrib>WICKS, G. W</creatorcontrib><creatorcontrib>TASKER, P. J</creatorcontrib><creatorcontrib>EASTMAN, L. F</creatorcontrib><title>dc characterization of the AlGaAs/GaAs tunneling emitter bipolar transistor</title><title>Applied physics letters</title><description>AlGaAs/GaAs tunneling emitter bipolar transistors (TEBT’s), grown by molecular beam epitaxy, have been fabricated. Device structures with two different tunneling barrier Al mole fractions and each for two different barrier thicknesses were characterized at room temperature. A differential current gain of 410 was achieved using a single 50 Å AlAs tunneling barrier. Devices with either thinner barriers (20 Å) or Al0.38Ga0.62As barriers had lower gains. Al0.24Ga0.76As/GaAs heterojunction bipolar transistors and GaAs homojunction bipolar transistors without tunneling barriers were also fabricated and characterized, for comparison. The performance of the homojunction devices was improved in all cases by inserting the tunneling barrier. The variations of the base and collector currents were measured for all devices and, for the TEBT’s they showed a functional dependence on the interfacial barrier Al mole fraction and thickness, which was attributed to carrier tunneling through the barrier. Furthermore, the above characteristics exhibit a clear electron-to-hole preferential tunneling.</description><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1987</creationdate><recordtype>article</recordtype><recordid>eNo9kEtLAzEQx4MoWKv4FXIQPW2b9-NYilax4EXPYZpmbSTdrUl60E_v1oqXGQZ-_B-D0DUlE0oUn9KJ1crIEzSiROuGU2pO0YgQwhtlJT1HF6V8DKdknI_Q89pjv4EMvoYcv6HGvsN9i-sm4FlawKxMDwPXfdeFFLt3HLaxDixexV2fIOOaoSux1D5forMWUglXf3uM3h7uX-ePzfJl8TSfLRvPha1NkNq2hBnLV8AEY2uhiBcSSBiCS8E1HHoI6zUJxgdoldGCCk-14VyvGB-j26PuLvef-1Cq28biQ0rQhX5fHBOCWG7FAN4dQZ_7UnJo3S7HLeQvR4k7mDjqfp81kDd_klA8pHbo5GP5x7USRCrDfwDOZGbn</recordid><startdate>19870629</startdate><enddate>19870629</enddate><creator>NAJJAR, F. E</creator><creator>RADULESCU, D. C</creator><creator>CHEN, Y.-K</creator><creator>WICKS, G. W</creator><creator>TASKER, P. J</creator><creator>EASTMAN, L. F</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19870629</creationdate><title>dc characterization of the AlGaAs/GaAs tunneling emitter bipolar transistor</title><author>NAJJAR, F. E ; RADULESCU, D. C ; CHEN, Y.-K ; WICKS, G. W ; TASKER, P. J ; EASTMAN, L. F</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c349t-e579f02893ba2422d460c45a0e9765437a106349c70e8ceaf687414c178337b23</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1987</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>NAJJAR, F. E</creatorcontrib><creatorcontrib>RADULESCU, D. C</creatorcontrib><creatorcontrib>CHEN, Y.-K</creatorcontrib><creatorcontrib>WICKS, G. W</creatorcontrib><creatorcontrib>TASKER, P. J</creatorcontrib><creatorcontrib>EASTMAN, L. F</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>NAJJAR, F. E</au><au>RADULESCU, D. C</au><au>CHEN, Y.-K</au><au>WICKS, G. W</au><au>TASKER, P. J</au><au>EASTMAN, L. F</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>dc characterization of the AlGaAs/GaAs tunneling emitter bipolar transistor</atitle><jtitle>Applied physics letters</jtitle><date>1987-06-29</date><risdate>1987</risdate><volume>50</volume><issue>26</issue><spage>1915</spage><epage>1917</epage><pages>1915-1917</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>AlGaAs/GaAs tunneling emitter bipolar transistors (TEBT’s), grown by molecular beam epitaxy, have been fabricated. Device structures with two different tunneling barrier Al mole fractions and each for two different barrier thicknesses were characterized at room temperature. A differential current gain of 410 was achieved using a single 50 Å AlAs tunneling barrier. Devices with either thinner barriers (20 Å) or Al0.38Ga0.62As barriers had lower gains. Al0.24Ga0.76As/GaAs heterojunction bipolar transistors and GaAs homojunction bipolar transistors without tunneling barriers were also fabricated and characterized, for comparison. The performance of the homojunction devices was improved in all cases by inserting the tunneling barrier. The variations of the base and collector currents were measured for all devices and, for the TEBT’s they showed a functional dependence on the interfacial barrier Al mole fraction and thickness, which was attributed to carrier tunneling through the barrier. Furthermore, the above characteristics exhibit a clear electron-to-hole preferential tunneling.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.97685</doi><tpages>3</tpages></addata></record> |
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language | eng |
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source | AIP Digital Archive |
subjects | Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
title | dc characterization of the AlGaAs/GaAs tunneling emitter bipolar transistor |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-04T18%3A10%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=dc%20characterization%20of%20the%20AlGaAs/GaAs%20tunneling%20emitter%20bipolar%20transistor&rft.jtitle=Applied%20physics%20letters&rft.au=NAJJAR,%20F.%20E&rft.date=1987-06-29&rft.volume=50&rft.issue=26&rft.spage=1915&rft.epage=1917&rft.pages=1915-1917&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.97685&rft_dat=%3Cproquest_cross%3E24409394%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c349t-e579f02893ba2422d460c45a0e9765437a106349c70e8ceaf687414c178337b23%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=24409394&rft_id=info:pmid/&rfr_iscdi=true |