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dc characterization of the AlGaAs/GaAs tunneling emitter bipolar transistor

AlGaAs/GaAs tunneling emitter bipolar transistors (TEBT’s), grown by molecular beam epitaxy, have been fabricated. Device structures with two different tunneling barrier Al mole fractions and each for two different barrier thicknesses were characterized at room temperature. A differential current ga...

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Published in:Applied physics letters 1987-06, Vol.50 (26), p.1915-1917
Main Authors: NAJJAR, F. E, RADULESCU, D. C, CHEN, Y.-K, WICKS, G. W, TASKER, P. J, EASTMAN, L. F
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cited_by cdi_FETCH-LOGICAL-c349t-e579f02893ba2422d460c45a0e9765437a106349c70e8ceaf687414c178337b23
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container_end_page 1917
container_issue 26
container_start_page 1915
container_title Applied physics letters
container_volume 50
creator NAJJAR, F. E
RADULESCU, D. C
CHEN, Y.-K
WICKS, G. W
TASKER, P. J
EASTMAN, L. F
description AlGaAs/GaAs tunneling emitter bipolar transistors (TEBT’s), grown by molecular beam epitaxy, have been fabricated. Device structures with two different tunneling barrier Al mole fractions and each for two different barrier thicknesses were characterized at room temperature. A differential current gain of 410 was achieved using a single 50 Å AlAs tunneling barrier. Devices with either thinner barriers (20 Å) or Al0.38Ga0.62As barriers had lower gains. Al0.24Ga0.76As/GaAs heterojunction bipolar transistors and GaAs homojunction bipolar transistors without tunneling barriers were also fabricated and characterized, for comparison. The performance of the homojunction devices was improved in all cases by inserting the tunneling barrier. The variations of the base and collector currents were measured for all devices and, for the TEBT’s they showed a functional dependence on the interfacial barrier Al mole fraction and thickness, which was attributed to carrier tunneling through the barrier. Furthermore, the above characteristics exhibit a clear electron-to-hole preferential tunneling.
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subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title dc characterization of the AlGaAs/GaAs tunneling emitter bipolar transistor
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